3DD4530_A1-H Datasheet. Specs and Replacement

Type Designator: 3DD4530_A1-H  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO92

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Detailed specifications: 3DD4515_A1, 3DD4515_A6, 3DD4518_A1D, 3DD4518_A3D, 3DD4518_A6D, 3DD4520_A3, 3DD4520_A4, 3DD4520_A6, BC558, 3DD4540_A3, 3DD4540_A7, 3DD4540_A9, 3DD4550_A4, 3DD6012_A6, 3DD6012_A1, 3DD741_A8, 3DG2482H_A1

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