2N655 Datasheet. Specs and Replacement

Type Designator: 2N655  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 25 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 90 °C

Electrical Characteristics

Transition Frequency (ft): 2.5 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: TO5

 2N655 Substitution

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2N655 datasheet

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2N655

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2N655

Xiamen Silicon-top opto electronics Co.,Ltd. Y2N 655S 60V 10A N-Channel MOSFET Power MOSFET (2 IN 1) General Features Proprietary New Trench Technology Ultra-low Miller Charge RDS(ON),typ.=43m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Con... See More ⇒

Detailed specifications: 2N6542, 2N6543, 2N6544, 2N6545, 2N6546, 2N6547, 2N6548, 2N6549, MJE340, 2N6551, 2N6552, 2N6553, 2N6554, 2N6555, 2N6556, 2N6557, 2N6558

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