2N655 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N655
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 90 °C
Transition Frequency (ft): 2.5 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO5
2N655 Transistor Equivalent Substitute - Cross-Reference Search
2N655 Datasheet (PDF)
0.2. Size:91K central
2n6551 2n6552 2n6553 2n6554 2n6555 2n6556.pdf
2n6551 2n6552 2n6553 2n6554 2n6555 2n6556.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
0.3. Size:1355K cn silicon billion
y2n655s.pdf
y2n655s.pdf
Xiamen Silicon-top opto electronics Co.,Ltd.Y2N 655S60V 10A N-Channel MOSFET Power MOSFET (2 IN 1)General FeaturesProprietary New Trench TechnologyUltra-low Miller ChargeRDS(ON),typ.=43m@VGS=10VLow Gate Charge Minimize Switching LossFast Recovery Body DiodeApplicationsHigh efficiency DC/DC Con
Datasheet: 2N6542 , 2N6543 , 2N6544 , 2N6545 , 2N6546 , 2N6547 , 2N6548 , 2N6549 , A1013 , 2N6551 , 2N6552 , 2N6553 , 2N6554 , 2N6555 , 2N6556 , 2N6557 , 2N6558 .
