3CA1012 Specs and Replacement

Type Designator: 3CA1012

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 170 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO220AB

 3CA1012 Substitution

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3CA1012 datasheet

 ..1. Size:226K  lzg

 2sa1012 3ca1012.pdf pdf_icon

3CA1012

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR Purpose High current switching applications. , , 2SC2562(3DA2562) Features Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25 ) ... See More ⇒

 8.1. Size:186K  lzg

 2sa1011 3ca1011.pdf pdf_icon

3CA1012

2SA1011(3CA1011) PNP /SILICON PNP TRANSISTOR 100W Purpose High voltage switching, AF power amplifier, 100W output predriver applications. 2SC2344(3DA2344) Features complementary pair with 2SC2344(3DA2344). /Absolute maximum ratings(Ta=25 ) ... See More ⇒

 9.1. Size:109K  china

 3ca1072.pdf pdf_icon

3CA1012

3CA1072 PNP PCM Ta=25 120 W IC 12 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=0.05m 120 V A V(BR)CEO ICE=1mA 120 V V(BR)EBO IEB=0.05mA 7 V ICBO VCB=120V 50 A IEBO VEB=7V 50 A ICEO VEB=120V 1.0 A IC=7.5A VCEsat 1.8 IB=1.5A V... See More ⇒

Detailed specifications: 3CA5680, 3CA5781, 3CA5782, 3CA5783, ALJ13002, ALJ13003, 3CA034, 3CA1011, 2SD1047, 3CA1072, 3CA1129, 3CA117, 3CA1184, 3CA1185, 3CA1203, 3CA1204, 3CA1217

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