STP5508 Datasheet and Replacement
Type Designator: STP5508
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3 TO204AE
STP5508 Substitution
STP5508 Datasheet (PDF)
stp5508.pdf

HIGH POWER NPN SILICON TRANSISTOR STP5508 Hermetic Metal TO3 Package. High Current Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 120V VEB Emitter Base Voltage 6V IC Continuous Collector Current 50A ICM Peak Collector Current 100A I
stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V
stb55nf06t4 stp55nf06fp.pdf

STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Keywords - STP5508 transistor datasheet
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