STP5508 Datasheet, Equivalent, Cross Reference Search
Type Designator: STP5508
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 140 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 600 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3 TO204AE
STP5508 Transistor Equivalent Substitute - Cross-Reference Search
STP5508 Datasheet (PDF)
stp5508.pdf
HIGH POWER NPN SILICON TRANSISTOR STP5508 Hermetic Metal TO3 Package. High Current Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 140V VCEO Collector Emitter Voltage 120V VEB Emitter Base Voltage 6V IC Continuous Collector Current 50A ICM Peak Collector Current 100A I
stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf
STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V
stb55nf06t4 stp55nf06fp.pdf
STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V
stp55ne06l.pdf
STP55NE06LSTP55NE06LFPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP55NE06L 60 V
stb55nf03l-1 stp55nf03l.pdf
STP55NF03LSTB55NF03L STB55NF03L-1N-CHANNEL 30V - 0.01 - 55A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP55NF03L 30 V
stp55ne06.pdf
STP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP55NE06 60 V
stp55nf06l.pdf
STP55NF06L - STP55NF06LFPSTB55NF06L - STB55NF06L-1N-CHANNEL 60V - 0.014 - 55A TO-220/FP/D2PAK/I2PAKSTripFETII POWER MOSFETTYPE VDSS RDS(on) IDSTP55NF06L 60 V
stb55nf06 stp55nf06 stp55nf06fp.pdf
STB55NF06, STP55NF06, STP55NF06FPN-channel 60 V, 0.015 , 50 A STripFET II Power MOSFET inDPAK, TO-220 and TO-220FP packagesDatasheet production dataFeaturesTABTABOrder code VDSS RDS(on) max. IDSTB55NF06350 A3 1STP55NF06 60 V
stp55ne06-fp.pdf
STP55NE06STP55NE06FPN-CHANNEL 60V - 0.019 - 55A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP55NE06 60 V
stp55nf06l stb55nf06l stb55nf06l-1.pdf
STP55NF06LSTB55NF06L - STB55NF06L-1N-channel 60V - 0.014 - 55A TO-220/D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP55NF06L 60V
stb55nf06l-1 stb55nf06lt4 stb55nf06l stb55nf06l-1 stp55nf06l.pdf
STP55NF06LSTB55NF06L - STB55NF06L-1N-channel 60V - 0.014 - 55A TO-220/D2PAK/I2PAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP55NF06L 60V
stp55nf03l stb55nf03l-1.pdf
STP55NF03LSTB55NF03L STB55NF03L-1N-CHANNEL 30V - 0.01 - 55A TO-220/D2PAK/I2PAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP55NF03L 30 V
stp55nf06.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STP55NF06DESCRIPTIONWith TO-220F packaging100% avalanche testedFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlAudio amplifiersDC-DC&DC-AC convertersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Sou
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
