RN1211 Specs and Replacement
Type Designator: RN1211
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92
RN1211 Substitution
- BJT ⓘ Cross-Reference Search
RN1211 datasheet
RN1210,RN1211 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1210,RN1211 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2210 and RN2211 Equivalent Circuit Absolute Maximum Ratings (Ta = ... See More ⇒
Detailed specifications: STA406A , STA408A , STA412A , STA413A , STA421A , STA431A , STA434A , RN1210 , BC639 , RN2201 , RN2202 , RN2203 , RN2204 , RN2205 , RN2206 , 3DA1360 , 3DA1360A .
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