3DA3834 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

3DA3834 Datasheet. Specs and Replacement

Type Designator: 3DA3834 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 110 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO220

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3DA3834 Substitution

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3DA3834 datasheet

..1. Size:165K foshan

2sc3834 3da3834.pdf pdf_icon

2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) 50... See More ⇒

0.1. Size:305K foshan

2sc3834f 3da3834f.pdf pdf_icon

2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) ... See More ⇒

9.1. Size:108K china

3da3866 2n3866.pdf pdf_icon

3DA3866(2N3866) NPN PCM Ta=25 5 W ICM 0.4 A Tjm 175 Tstg -55 150 V(BR)CBO IC=0.1mA 55 V V(BR)CEO IC=5.0mA 30 V V(BR)EBO IE=0.1mA 3.5 V ICEO VCE=28V 20 A IC=100mA VCEsat 1 V IB=20mA VCE=5V hFE 25 IC=50m A VCE=15V ... See More ⇒

9.2. Size:188K foshan

2sc3807 3da3807.pdf pdf_icon