3DA30B Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA30B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA30B Transistor Equivalent Substitute - Cross-Reference Search
3DA30B Datasheet (PDF)
9.1. Size:110K no
3da30a-g.pdf
3da30a-g.pdf
3DA30 NPN A B C D E F G PCM Tc=25 30 W ICM 3 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 25 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 25 50 100 150 300 250 300 V ICEO VCE=20V 1 mA IC=1.5A VCEsat 0.8 V IB=0.3A
9.2. Size:213K foshan
2sc3063 3da3063.pdf
2sc3063 3da3063.pdf
2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR : Purpose: Video output amplifier. :, Features: High V , low C . CEO ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
