All Transistors. 3DA30E Datasheet

 

3DA30E Datasheet and Replacement


   Type Designator: 3DA30E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DA30E Datasheet (PDF)

 9.1. Size:110K  no
 3da30a-g.pdf pdf_icon

3DA30E

3DA30 NPN A B C D E F G PCM Tc=25 30 W ICM 3 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=1mA 25 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 25 50 100 150 300 250 300 V ICEO VCE=20V 1 mA IC=1.5A VCEsat 0.8 V IB=0.3A

 9.2. Size:213K  foshan
 2sc3063 3da3063.pdf pdf_icon

3DA30E

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR : Purpose: Video output amplifier. :, Features: High V , low C . CEO ob/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA

Datasheet: 3DA2621 , 3DA2654 , 3DA2688 , 3DA2983 , 3DA30A , 3DA30B , 3DA30C , 3DA30D , C5198 , 3DA30F , 3DA30G , 3DA3063 , 3DA5147 , 3DA5192 , 3DA5200A , 3DA5200B , 3DA5200C .

Keywords - 3DA30E transistor datasheet

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