3DA30E Datasheet. Specs and Replacement

Type Designator: 3DA30E  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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3DA30E datasheet

 9.1. Size:110K  no

 3da30a-g.pdf pdf_icon

3DA30E

3DA30 NPN A B C D E F G PCM Tc=25 30 W ICM 3 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=1mA 25 50 100 150 200 250 300 V V(BR)CEO ICE=1mA 25 50 100 150 300 250 300 V ICEO VCE=20V 1 mA IC=1.5A VCEsat 0.8 V IB=0.3A ... See More ⇒

 9.2. Size:213K  foshan

 2sc3063 3da3063.pdf pdf_icon

3DA30E

2SC3063(3DA3063) NPN /SILICON NPN TRANSISTOR Purpose Video output amplifier. , Features High V , low C . CEO ob /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V 300 V CEO V 7.0 V EBO I 100 mA C I 200 mA ... See More ⇒

Detailed specifications: 3DA2621, 3DA2654, 3DA2688, 3DA2983, 3DA30A, 3DA30B, 3DA30C, 3DA30D, 2N3055, 3DA30F, 3DA30G, 3DA3063, 3DA5147, 3DA5192, 3DA5200A, 3DA5200B, 3DA5200C

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