3DA3421 Datasheet and Replacement
Type Designator: 3DA3421
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO126F TO225F
3DA3421 Datasheet (PDF)
2sc3421 3da3421.pdf

2SC3421(3DA3421) NPN /SILICON NPN TRANSISTOR : Purpose: Audio frequency power amplifier applications. : V 60-80W 2SA13583CA1358 CEO Features: High V ,suitable for driver of 60 to 80 watts audio amplifier, complementary CEOto 2SA1358(3CA1358). /Absolute
2sc3422 3da3422.pdf

2SC3422(3DA3422) NPN /SILICON NPN TRANSISTOR Purpose: Audio frequency power amplifier, low speed switching. 5W h 2SA1359(3CA1359) FEFeatures: Suitable for output stage of 5 watts car radio and car stereo, good linearity of h , FE compleme
2sc3420 3da3420.pdf

2SC3420(3DA3420) NPN /SILICON NPN TRANSISTOR :, Purpose: Storobo flash applications, medium power amplifier applications. :,, Features: High DC current gain, low saturation voltagehigh collector power dissipation. /Absolute ma
3da340.pdf

3DA340 NPN PCM TC=25 15 W ICM 0.5 A Tjm 150 Tstg -55~150 V(BR)CBO ICB=0.1mA 300 V V(BR)CEO ICE=0.1mA 300 V V(BR)EBO IEB=0.1mA 3.0 V ICBO VCB=300V 0.1 mA IEBO VEB=3V 0.1 mA IC=100mA VCEsat 1.0 V IB=10mA VCE=10V hFE 30~240 IC=
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SC4910 | HBP1036S6R | 2SA2099 | DT430 | MMDT3946LP4 | KSC2223O | KT3151E9
Keywords - 3DA3421 transistor datasheet
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History: 2SC4910 | HBP1036S6R | 2SA2099 | DT430 | MMDT3946LP4 | KSC2223O | KT3151E9



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