3DA4 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA4
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
3DA4 Transistor Equivalent Substitute - Cross-Reference Search
3DA4 Datasheet (PDF)
3da1 3da2 3da4.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1.
3da4793.pdf
3DA4793(NPN)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3Features Complementary to 3CA1837 Collector Power Dissipation PCM : 2W (Tamb=25) 20 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Vo
3da493ta.pdf
3DA493TA NPN PCM TC=25 1 W ICM 1 A Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 120 V V(BR)CEO ICE=10mA 100 V V(BR)EBO IEB=0.1mA 5 V ICBO VCB=100V 0.1 mA ICEO VCE=4V 0.1 mA VBEsat 1.15 IC=0.5A V IB=0.05A VCEsat 0.6 VCE=10V h
ztx458 3da458.pdf
ZTX458(3DA458) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power high voltage applications. : Features: High V , high P . CEO C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 400 V CBO V 400 V CEO V 5.0
tip41 3da41.pdf
TIP41(3DA41) NPN /SILICON NPN TRANSISTOR : Purpose: Medium power linear switching applications. : TIP42(3CA42) Features: Complement to TIP42(3CA42). /Absolute maximum ratings(Ta=25) Symbol Rating Unit Symbol Rating UnitTIP41 40 V 5.0
ztx450 3da450.pdf
ZTX450(3DA450) NPN /SILICON NPN TRANSISTOR :/Purpose: Medium power amplifier applications. :/Features: High P and I . C C/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 45 V CEO V 5.0 V EBO I 1.0 A C
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
