3DA4 Specs and Replacement
Type Designator: 3DA4
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
3DA4 Substitution
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3DA4 datasheet
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA1, 3DA2, 3DA4 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97. QZJ840611A, QZJ840611 only for 3DA1. ... See More ⇒
3DA4793(NPN) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features Complementary to 3CA1837 Collector Power Dissipation PCM 2W (Tamb=25 ) 20 W (Tcase=25 ) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Vo... See More ⇒
"3DA4544" 3DA4544 1 3DA4544 NPN 4.5 10 0.1 TO-220F 2.7 2 2.1 3.2 ... See More ⇒
"3DA4002(3DA5109)" 3DA4002(3DA5109) 1 3DA4002(3DA5109) NPN ... See More ⇒
Detailed specifications: 3DA340, 3DA3417, 3DA3420, 3DA3421, 3DA3422, 3DA3502, 3DA1, 3DA2, A940, 3DA10A, 3DA10B, 3DA10C, 3DA10D, 3DA10E, 3DA10F, 3DA10G, 3DA100A
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History: NTE18 | 3DA3420 | HMJE13003 | 3DA1360 | 3DD101D | 3DA75F | 3DD103E
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