3DA8D Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA8D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 180 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB
3DA8D Transistor Equivalent Substitute - Cross-Reference Search
3DA8D Datasheet (PDF)
..1. Size:134K china
3da8a 3da8b 3da8c 3da8d 3da8e.pdf
3da8a 3da8b 3da8c 3da8d 3da8e.pdf
3DA8 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=15mA 120 150 180 200 250 V V(BR)CEO ICE=15mA 80 120 150 180 200 V V(BR)EBO IEB=10mA 5.0 V ICBO VCB=30V 1.0 mA ICEO VCE
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .