3DA80B Datasheet. Specs and Replacement

Type Designator: 3DA80B  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO18

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3DA80B datasheet

 9.1. Size:24K  shaanxi

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3DA80B

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA80 NPN Silicon High Frequency Middle Power Transistor Features 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source ... See More ⇒

Detailed specifications: 3DA3279, 3DA3866, 3DA8A, 3DA8B, 3DA8C, 3DA8D, 3DA8E, 3DA80A, MJE350, 3DA80C, 3DA87A, 3DA87B, 3DA87C, 3DA87D, 3DA882, 3DA96A, 3DA96B

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