All Transistors. 3DA80C Datasheet

 

3DA80C Datasheet and Replacement


   Type Designator: 3DA80C
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO18
 

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3DA80C Datasheet (PDF)

 9.1. Size:24K  shaanxi
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3DA80C

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA80NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source

Datasheet: 3DA3866 , 3DA8A , 3DA8B , 3DA8C , 3DA8D , 3DA8E , 3DA80A , 3DA80B , TIP36C , 3DA87A , 3DA87B , 3DA87C , 3DA87D , 3DA882 , 3DA96A , 3DA96B , 3DA96C .

History: KT807B

Keywords - 3DA80C transistor datasheet

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