3DA50C PDF Specs and Replacement
Type Designator: 3DA50C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
3DA50C Substitution
3DA50C PDF detailed specifications
9.2. Size:25K shaanxi
3da50.pdf
3da50.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒
Detailed specifications: 3DA5B , 3DA5C , 3DA5D , 3DA5E , 3DA5F , 3DA5G , 3DA50A , 3DA50B , TIP41 , 3DA50D , 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A .
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