All Transistors. 3DA50F Datasheet

 

3DA50F Datasheet and Replacement


   Type Designator: 3DA50F
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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3DA50F Datasheet (PDF)

 9.1. Size:105K  china
 3da5038.pdf pdf_icon

3DA50F

3DA5038 NPN PCM TC=25 140 W ICM 20 A Tjm 175 Tstg -55~175 V(BR)CBO ICB=10mA 150 V V(BR)CEO ICE=10mA 150 V V(BR)EBO IEB=10mA 5 V ICBO VCB=Vcbo 1.0 mA ICEO VEB=0.5VCEO 1.0 mA IC=10A VCEsat 1.5 IB=2A VCE=5V hFE 55~80 IC=10A

 9.2. Size:25K  shaanxi
 3da50.pdf pdf_icon

3DA50F

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50NPN Silicon High Frequency High Power Transistor Features: 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer

Datasheet: 3DA5E , 3DA5F , 3DA5G , 3DA50A , 3DA50B , 3DA50C , 3DA50D , 3DA50E , BD140 , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , 3DA58B , 3DA58C , 3DA58D .

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