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3DA50G Specs and Replacement


   Type Designator: 3DA50G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 3DA50G Substitution

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3DA50G detailed specifications

 9.1. Size:105K  china
 3da5038.pdf pdf_icon

3DA50G

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 9.2. Size:25K  shaanxi
 3da50.pdf pdf_icon

3DA50G

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA50 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Detailed specifications: 3DA5F , 3DA5G , 3DA50A , 3DA50B , 3DA50C , 3DA50D , 3DA50E , 3DA50F , 2SA1943 , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , 3DA58B , 3DA58C , 3DA58D , 3DA58E .

Keywords - 3DA50G transistor specs

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