3DA56 Datasheet, Equivalent, Cross Reference Search
Type Designator: 3DA56
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.3 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: SOT89
3DA56 Transistor Equivalent Substitute - Cross-Reference Search
3DA56 Datasheet (PDF)
..1. Size:113K china
3da56.pdf
3da56.pdf
3DA56 NPN PCM Ta=25 1.3 W ICM 1 A Tjm 150 Tstg -55~150 V(BR)CBO 0.1mA 80 V V(BR)CEO 0.1mA 100 V V(BR)EBO 0.1mA 5 V ICBO VEB=5V 0.1 A IEBO VCB=30V 0.1 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1 VCE=2V hFE 25 IC=50
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
