3DA56 Datasheet. Specs and Replacement

Type Designator: 3DA56  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.3 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 130 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: SOT89

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3DA56 datasheet

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3DA56

3DA56 NPN PCM Ta=25 1.3 W ICM 1 A Tjm 150 Tstg -55 150 V(BR)CBO 0.1mA 80 V V(BR)CEO 0.1mA 100 V V(BR)EBO 0.1mA 5 V ICBO VEB=5V 0.1 A IEBO VCB=30V 0.1 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1 VCE=2V hFE 25 IC=50... See More ⇒

Detailed specifications: 3DA50B, 3DA50C, 3DA50D, 3DA50E, 3DA50F, 3DA50G, 3DA5038, 3DA5109, 13007, 3DA58A, 3DA58B, 3DA58C, 3DA58D, 3DA58E, 3DA608A, 3DA608B, 3DA608C

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