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3DA56 Specs and Replacement


   Type Designator: 3DA56
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.3 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: SOT89
 

 3DA56 Substitution

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3DA56 detailed specifications

 ..1. Size:113K  china
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3DA56

3DA56 NPN PCM Ta=25 1.3 W ICM 1 A Tjm 150 Tstg -55 150 V(BR)CBO 0.1mA 80 V V(BR)CEO 0.1mA 100 V V(BR)EBO 0.1mA 5 V ICBO VEB=5V 0.1 A IEBO VCB=30V 0.1 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1 VCE=2V hFE 25 IC=50... See More ⇒

Detailed specifications: 3DA50B , 3DA50C , 3DA50D , 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 13007 , 3DA58A , 3DA58B , 3DA58C , 3DA58D , 3DA58E , 3DA608A , 3DA608B , 3DA608C .

History: DTD523YM | 3DA75C | RN1327A | 3DA5038

Keywords - 3DA56 transistor specs

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 3DA56 equivalent finder
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