3DA58C Specs and Replacement
Type Designator: 3DA58C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO276AB TO220 TO257
3DA58C Substitution
3DA58C detailed specifications
9.1. Size:146K china
3da58.pdf
3da58.pdf
3DA58 NPN A B C D E PCM TC=25 50 W ICM 3 A Tjm 175 Tstg -55 150 VCE=10V Rth 3.0 /W IC=1A V(BR)CBO ICB=5mA 300 400 600 800 1000 V V(BR)CEO ICE=5mA 200 300 300 400 500 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=100V 0.1 mA ICEO VCE=... See More ⇒
Detailed specifications: 3DA50E , 3DA50F , 3DA50G , 3DA5038 , 3DA5109 , 3DA56 , 3DA58A , 3DA58B , D882 , 3DA58D , 3DA58E , 3DA608A , 3DA608B , 3DA608C , 3DA608D , 3DA608E , 3DA608F .
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