2N930UB Specs and Replacement
Type Designator: 2N930UB
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: UB
2N930UB Substitution
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2N930UB datasheet
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/253L completed by 7 July 2011. 7 April 2011 SUPERSEDING MIL-PRF-19500/253K 3 July 2008 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N930 AND 2N930UB, JAN, JANTX, JANTXV, JANS, JANHC, JANKC, JANSM, ... See More ⇒
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N930 2N930A UNIT VCEO Collector Emitter Voltage 45 60 V VCBO Collector Base Voltage 45 60 V VEBO Emitter Base Voltage 5 6 V IC Collector Current Continuous... See More ⇒
Detailed specifications: 2N6306T1, 2N6306T3, 2N6308T1, 2N6308T3, 2N916CSM, 2N916DCSM, 2N918ADCSM, 2N918DCSM, 8550, 2N6338X, 2N6340X, 2N6341X, 2N6385SMD05, 2N6517M, 3CG6517M, 2N6546T1, 2N6546T3
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History: BDV67B | 2SA1239G
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