2N659 Datasheet. Specs and Replacement

Type Designator: 2N659  📄📄 

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Collector-Emitter Voltage |Vce|: 14 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 120 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 24 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

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2N659 datasheet

 0.1. Size:160K  bocasemi

 2n6494 2n6594.pdf pdf_icon

2N659

A Boca Semiconductor Corp http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com A Boca Semiconductor Corp BSC http //www.bocasemi.com ... See More ⇒

 0.2. Size:151K  jmnic

 2n6594.pdf pdf_icon

2N659

JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL... See More ⇒

 0.3. Size:117K  inchange semiconductor

 2n6594.pdf pdf_icon

2N659

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings... See More ⇒

Detailed specifications: 2N6582, 2N6583, 2N6584, 2N6585, 2N6586, 2N6587, 2N6588, 2N6589, TIP142, 2N6590, 2N6591, 2N6592, 2N6593, 2N6594, 2N6595, 2N6596, 2N6597

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