2N6591 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6591
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO202
2N6591 Transistor Equivalent Substitute - Cross-Reference Search
2N6591 Datasheet (PDF)
2n6494 2n6594.pdf
ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6594.pdf
JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2n6594.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
