All Transistors. 2N6591 Datasheet

 

2N6591 Datasheet and Replacement


   Type Designator: 2N6591
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO202
 

 2N6591 Substitution

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2N6591 Datasheet (PDF)

 9.1. Size:160K  bocasemi
 2n6494 2n6594.pdf pdf_icon

2N6591

ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com

 9.2. Size:151K  jmnic
 2n6594.pdf pdf_icon

2N6591

JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

 9.3. Size:117K  inchange semiconductor
 2n6594.pdf pdf_icon

2N6591

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings

Datasheet: 2N6584 , 2N6585 , 2N6586 , 2N6587 , 2N6588 , 2N6589 , 2N659 , 2N6590 , 13001-A , 2N6592 , 2N6593 , 2N6594 , 2N6595 , 2N6596 , 2N6597 , 2N6598 , 2N6599 .

History: 2SC3485 | 40471 | 2SD816 | PMST6429 | IDB677

Keywords - 2N6591 transistor datasheet

 2N6591 cross reference
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