2N6596 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6596
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4000 MHz
Collector Capacitance (Cc): 1.1 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO33-1
2N6596 Transistor Equivalent Substitute - Cross-Reference Search
2N6596 Datasheet (PDF)
2n6494 2n6594.pdf
ABoca Semiconductor Corp http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6594.pdf
JMnic Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL
2n6594.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6594 DESCRIPTION With TO-3 package Complement to type 2N6569 Wide area of safe operation APPLICATIONS Designed for low voltage amplifier power switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings
Datasheet: 2N6589 , 2N659 , 2N6590 , 2N6591 , 2N6592 , 2N6593 , 2N6594 , 2N6595 , 4124 , 2N6597 , 2N6598 , 2N6599 , 2N66 , 2N660 , 2N6600 , 2N6601 , 2N6602 .
