PZT651T1G Specs and Replacement
Type Designator: PZT651T1G
SMD Transistor Code: 651
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: SOT223
PZT651T1G Substitution
- BJT ⓘ Cross-Reference Search
PZT651T1G datasheet
PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface www.onsemi.com mount applications. SOT-223 package ensures level mounting, resulting in improved SOT-223 PACKAGE HIGH CURRENT thermal conduction, and allo... See More ⇒
PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface www.onsemi.com mount applications. SOT-223 package ensures level mounting, resulting in improved SOT-223 PACKAGE HIGH CURRENT thermal conduction, and allo... See More ⇒
Detailed specifications: PXT8050-D3, PXT8550-B, PXT8550-C, PXT8550-D, PXT8550-D3, PXTA44, PZT2222, PZT3904T1G, TIP2955, PZT751T1G, PZTA28, PZTA42T1G, PZTA43, PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G
Keywords - PZT651T1G pdf specs
PZT651T1G cross reference
PZT651T1G equivalent finder
PZT651T1G pdf lookup
PZT651T1G substitution
PZT651T1G replacement
