All Transistors. PZT651T1G Datasheet

 

PZT651T1G Datasheet and Replacement


   Type Designator: PZT651T1G
   SMD Transistor Code: 651
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.8 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 75 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT223
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PZT651T1G Datasheet (PDF)

 ..1. Size:63K  onsemi
 pzt651t1g.pdf pdf_icon

PZT651T1G

PZT651NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.SOT-223 package ensures level mounting, resulting in improvedSOT-223 PACKAGE HIGH CURRENTthermal conduction, and allo

 8.1. Size:58K  onsemi
 pzt651.pdf pdf_icon

PZT651T1G

PZT651NPN Silicon PlanarEpitaxial TransistorThis NPN Silicon Epitaxial transistor is designed for use inindustrial and consumer applications. The device is housed in theSOT-223 package which is designed for medium power surfacewww.onsemi.commount applications.SOT-223 package ensures level mounting, resulting in improvedSOT-223 PACKAGE HIGH CURRENTthermal conduction, and allo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BCX5110 | KTC2553 | 2G384 | 2SC1338 | S1838 | A928A | KA4F3R

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