QS5W1 Datasheet, Equivalent, Cross Reference Search
Type Designator: QS5W1
SMD Transistor Code: W01
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 270 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TSMT5
QS5W1 Transistor Equivalent Substitute - Cross-Reference Search
QS5W1 Datasheet (PDF)
..1. Size:506K rohm
qs5w1.pdf
qs5w1.pdf
Data SheetMidium Power Transistors (30V / 3A) QS5W1 Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorTSMT5 Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)2) High speed switching(1) Tr.1 Base(2) Emitter(3) Tr.2 Base Applications(4) Tr.2 Collector Abbreviated symbol : W01(5) Tr.1 CollectorLow Freque
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
