All Transistors. QS5W1 Datasheet

 

QS5W1 Datasheet and Replacement


   Type Designator: QS5W1
   SMD Transistor Code: W01
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 270 MHz
   Collector Capacitance (Cc): 16 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TSMT5
 

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QS5W1 Datasheet (PDF)

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QS5W1

Data SheetMidium Power Transistors (30V / 3A) QS5W1 Structure Dimensions (Unit : mm)NPN Silicon epitaxial planar transistorTSMT5 Features1) Low saturation voltageVCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA)2) High speed switching(1) Tr.1 Base(2) Emitter(3) Tr.2 Base Applications(4) Tr.2 Collector Abbreviated symbol : W01(5) Tr.1 CollectorLow Freque

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Keywords - QS5W1 transistor datasheet

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