QS5W1 Specs and Replacement
Type Designator: QS5W1
SMD Transistor Code: W01
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 270 MHz
Collector Capacitance (Cc): 16 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TSMT5
QS5W1 Substitution
- BJT ⓘ Cross-Reference Search
QS5W1 datasheet
Data Sheet Midium Power Transistors (30V / 3A) QS5W1 Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 1A / 50mA) 2) High speed switching (1) Tr.1 Base (2) Emitter (3) Tr.2 Base Applications (4) Tr.2 Collector Abbreviated symbol W01 (5) Tr.1 Collector Low Freque... See More ⇒
Detailed specifications: PZT751T1G, PZTA28, PZTA42T1G, PZTA43, PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G, TIP142, QS5W2, QS5Y1, QS5Y2, QS6Z5, QSH29, QSL10, QSL11, QSL12
Keywords - QS5W1 pdf specs
QS5W1 cross reference
QS5W1 equivalent finder
QS5W1 pdf lookup
QS5W1 substitution
QS5W1 replacement
