QS5Y1 Datasheet, Equivalent, Cross Reference Search
Type Designator: QS5Y1
SMD Transistor Code: Y01
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 270 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TSMT5
QS5Y1 Transistor Equivalent Substitute - Cross-Reference Search
QS5Y1 Datasheet (PDF)
..1. Size:581K rohm
qs5y1.pdf
qs5y1.pdf
Data SheetMidium Power Transistors (30V / 3A) QS5Y1 Structure Dimensions (Unit : mm)PNP/NPN Silicon epitaxial planar transistorTSMT5 Features1) Low saturation voltage, typicallyVCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)VCE (sat) = 0.40V (Max.) (IC / IB= 1A / 50mA)(1) Tr.1 Base2) High speed switching(2) Emitter(3) Tr.2 Base(4) Tr.2 CollectorAbbre
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: UNR1115
