QS5Y1 Specs and Replacement
Type Designator: QS5Y1
SMD Transistor Code: Y01
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 270 MHz
Forward Current Transfer Ratio (hFE), MIN: 200
Package: TSMT5
QS5Y1 Substitution
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QS5Y1 datasheet
Data Sheet Midium Power Transistors ( 30V / 3A) QS5Y1 Structure Dimensions (Unit mm) PNP/NPN Silicon epitaxial planar transistor TSMT5 Features 1) Low saturation voltage, typically VCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA) VCE (sat) = 0.40V (Max.) (IC / IB= 1A / 50mA) (1) Tr.1 Base 2) High speed switching (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector Abbre... See More ⇒
Detailed specifications: PZTA42T1G, PZTA43, PZTA45, PZTA92T1G, PZTA93, PZTA96ST1G, QS5W1, QS5W2, MPSA42, QS5Y2, QS6Z5, QSH29, QSL10, QSL11, QSL12, QSL9, QST8
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