All Transistors. QS5Y1 Datasheet

 

QS5Y1 Datasheet and Replacement


   Type Designator: QS5Y1
   SMD Transistor Code: Y01
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 270 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TSMT5
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QS5Y1 Datasheet (PDF)

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QS5Y1

Data SheetMidium Power Transistors (30V / 3A) QS5Y1 Structure Dimensions (Unit : mm)PNP/NPN Silicon epitaxial planar transistorTSMT5 Features1) Low saturation voltage, typicallyVCE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)VCE (sat) = 0.40V (Max.) (IC / IB= 1A / 50mA)(1) Tr.1 Base2) High speed switching(2) Emitter(3) Tr.2 Base(4) Tr.2 CollectorAbbre

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: HUN2211 | 2N2486 | P210S | KT881G | SGSF425 | 2SC3453 | ASY86

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