SM58B Datasheet and Replacement
Type Designator: SM58B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 44 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
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SM58B Datasheet (PDF)
sm58b.pdf

SILICON NPN TRANSISTOR SM58B Advanced Distributed Base Technology Designed For Use In Electronic Ballast Applications Efficient Power Switching ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) BVCBO Collector Base Breakdown Voltage 180V BVCEO Collector Emitter Breakdown Voltage 90V BVEBO Emitter Base Breakdown Voltage 10V IC Colle
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: KT686G | CDQ10036 | 16029 | BD648 | BLT80 | 40898 | BD536K
Keywords - SM58B transistor datasheet
SM58B cross reference
SM58B equivalent finder
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History: KT686G | CDQ10036 | 16029 | BD648 | BLT80 | 40898 | BD536K



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