SM58B Specs and Replacement
Type Designator: SM58B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 44 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO220
SM58B Substitution
- BJT ⓘ Cross-Reference Search
SM58B datasheet
SILICON NPN TRANSISTOR SM58B Advanced Distributed Base Technology Designed For Use In Electronic Ballast Applications Efficient Power Switching ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) BVCBO Collector Base Breakdown Voltage 180V BVCEO Collector Emitter Breakdown Voltage 90V BVEBO Emitter Base Breakdown Voltage 10V IC Colle... See More ⇒
Detailed specifications: SLA4390, SLA6012, SLA6020, SLA6022, SLA6023, SLA6024, SLA6026, SM56B, TIP127, SMA4020, SMA4021, SMA4030, SMA4032, SMA4033, SMA4036, SMA6010, SMA6080
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