SM58B Datasheet, Equivalent, Cross Reference Search
Type Designator: SM58B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 44 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO220
SM58B Transistor Equivalent Substitute - Cross-Reference Search
SM58B Datasheet (PDF)
..1. Size:107K semelab
sm58b.pdf
sm58b.pdf
SILICON NPN TRANSISTOR SM58B Advanced Distributed Base Technology Designed For Use In Electronic Ballast Applications Efficient Power Switching ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) BVCBO Collector Base Breakdown Voltage 180V BVCEO Collector Emitter Breakdown Voltage 90V BVEBO Emitter Base Breakdown Voltage 10V IC Colle
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , TIP142 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
