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2N6649 Specs and Replacement

Type Designator: 2N6649

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO66

 2N6649 Substitution

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2N6649 datasheet

 9.1. Size:146K  mospec

2n6383-85 2n6648-49 2n6650.pdf pdf_icon

2N6649

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 9.2. Size:184K  inchange semiconductor

2n6648.pdf pdf_icon

2N6649

isc Product Specification isc Silicon PNP Darlingtion Power Transistor 2N6648 DESCRIPTION With TO-3 packaging Built-in base-emitter shunt resistors Very high DC current gain Complement to type 2N6648 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Electronic ignition Alternator regulator Motor controls Power switchin... See More ⇒

Detailed specifications: 2N6618, 2N6619, 2N662, 2N6620, 2N6621, 2N6622, 2N663, 2N6648, TIP41, 2N665, 2N6650, 2N6653, 2N6653-1, 2N6653-2, 2N6653-3, 2N6653A, 2N6653B

Keywords - 2N6649 pdf specs

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