2N6649 Datasheet and Replacement
Type Designator: 2N6649
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO66
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2N6649 Datasheet (PDF)
2n6648.pdf

isc Product Specificationisc Silicon PNP Darlingtion Power Transistor 2N6648DESCRIPTIONWith TO-3 packagingBuilt-in base-emitter shunt resistorsVery high DC current gainComplement to type 2N6648Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ignitionAlternator regulatorMotor controlsPower switchin
Datasheet: 2N6618 , 2N6619 , 2N662 , 2N6620 , 2N6621 , 2N6622 , 2N663 , 2N6648 , TIP3055 , 2N665 , 2N6650 , 2N6653 , 2N6653-1 , 2N6653-2 , 2N6653-3 , 2N6653A , 2N6653B .
History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | BF763 | SGSF321
Keywords - 2N6649 transistor datasheet
2N6649 cross reference
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History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | BF763 | SGSF321



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