BUL57AN2B Datasheet. Specs and Replacement
Type Designator: BUL57AN2B 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 22 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 280 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO276AB
BUL57AN2B Substitution
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BUL57AN2B datasheet
HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B High Voltage, High Current Hermetic Ceramic Surface Mount Package Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 200V VCEO Collector Emitter Volta... See More ⇒
Detailed specifications: BUL54BSMD, TIP36CP, BUL5555, BUL55ASMD, BUL55BSMD, BUL56ASMD, BUL56BSMD, BUL57AN2A, S9013, BUL58ASMD, BUL58BSMD, BUL62A, KA4A3Q, KA4A4L, KA4A4M, KA4A4P, KA4A4Z
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