BUL62A Datasheet and Replacement
Type Designator: BUL62A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 1000 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 45 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO251
BUL62A Substitution
BUL62A Datasheet (PDF)
bul62a.pdf
BUL62ASEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mm (inches)HIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252) HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)SILICON POWER TRANSISTOR5.46 (0.215) 0.94 (0.037)1.09 (0.043)1.30 (0.051)Designed for use in electronic ballast applications5.97 (0.235)6.22 (0.245)1 2 3 SEMEFAB DESI
bul62b.pdf
BUL62BSEMELABADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mm (inches)HIGH VOLTAGE2.18 (0.086)2.44 (0.096)6.40 (0.252) HIGH SPEED NPN6.78 (0.267)5.21 (0.205) 0.84 (0.033)SILICON POWER TRANSISTOR5.46 (0.215) 0.94 (0.037)1.09 (0.043)1.30 (0.051)Designed for use in electronic ballast applications5.97 (0.235)6.22 (0.245)1 2 3 SEMEFAB DESI
Datasheet: BUL55ASMD , BUL55BSMD , BUL56ASMD , BUL56BSMD , BUL57AN2A , BUL57AN2B , BUL58ASMD , BUL58BSMD , 13005 , KA4A3Q , KA4A4L , KA4A4M , KA4A4P , KA4A4Z , KA4F3M , KA4F3P , KA4F3R .
History: D66EV7 | D66EV6 | D882B-P | NSVMUN5135DW1T1G | MMCM4261
Keywords - BUL62A transistor datasheet
BUL62A cross reference
BUL62A equivalent finder
BUL62A lookup
BUL62A substitution
BUL62A replacement
History: D66EV7 | D66EV6 | D882B-P | NSVMUN5135DW1T1G | MMCM4261
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