KC807A Datasheet, Equivalent, Cross Reference Search
Type Designator: KC807A
SMD Transistor Code: 5A_5B_5C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.31 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
KC807A Transistor Equivalent Substitute - Cross-Reference Search
KC807A Datasheet (PDF)
kc807a.pdf
SMD Type TransistorsSMD TypePNP TransistorsBC807A (KC807A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFor general AF applications.1 2+0.1+0.050.95 -0.1 0.1 -0.01High collector current.+0.11.9 -0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
kc807w.pdf
SMD Type TransistorsPNP TransistorsBC807W (KC807W) Features Ldeally suited for automatic insertion Epitaxial planar die construction Complementary to BC817W1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -5
kc807.pdf
SMD Type TransistorsPNP Silicon AF TransistorsKC807(BC807)SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesFor general AF applications.12+0.1+0.050.95-0.1 0.1-0.01High collector current.+0.11.9-0.1High current gain.Low collector-emitter saturation voltage.1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollect
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
