KC859W PDF Specs and Replacement
Type Designator: KC859W
SMD Transistor Code: 4D*_4B*_4C*
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Noise Figure, dB: -
Package: SOT323
KC859W Substitution
KC859W PDF detailed specifications
kc859w kc860w.pdf
SMD Type Transistors PNP Transistors BC859W,BC860W (KC859W,KC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). Complements to BC849W and BC850W. C B 1.Base 2.Emitter E 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BC859W -30 Collector - Base Voltage VCBO BC860W -50 BC859W -30 V Collector - Emitter Voltag... See More ⇒
kc859 kc860.pdf
SMD Type Transistors PNP Transistors BC859 BC860 (KC859 KC860) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Low current (max. 100 mA) Low voltage (max. 45 V). NPN complements BC849 and BC850. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec... See More ⇒
Detailed specifications: KC857T , KC857W , KC858 , KC858A , KC858B , KC858C , KC858W , KC859 , BD136 , KC860 , KC860W , RN1116F , RN1114FT , RN1115FT , KCP51 , KCP52 , KCP53 .
History: 9013F | KC856A | KC857 | LMBT2222AWT1G | NA11HI | NA12HJ | A1037
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