KMDT3906 Datasheet. Specs and Replacement

Type Designator: KMDT3906  📄📄 

SMD Transistor Code: K3N

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT363

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KMDT3906 datasheet

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KMDT3906

SMD Type Transistors PNP Transistors MMDT3906 (KMDT3906) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual PNP Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - ... See More ⇒

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 kmdt3904.pdf pdf_icon

KMDT3906

SMD Type Transistors NPN Transistors MMDT3904 (KMDT3904) Features Epitaxial planar die construction Ideal for low power amplification and switching Dual NPN Transistors Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Collector Current - Con... See More ⇒

Detailed specifications: KCP56, KCP56-16, KCP68, KCP69, KMBTA05, KMBTA06, KMBTA45, KMDT3904, TIP41, KMMT491, KMMT493, KMMT718, KMMT720, KFS20, KDT1302, KDT1304, KDT1898

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