CXT3150 Datasheet, Equivalent, Cross Reference Search
Type Designator: CXT3150
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT89
CXT3150 Transistor Equivalent Substitute - Cross-Reference Search
CXT3150 Datasheet (PDF)
cxt3150.pdf
CXT3150www.centralsemi.comSURFACE MOUNT DESCRIPTION:NPN SILICON POWER TRANSISTORThe CENTRAL SEMICONDUCTOR CXT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications.MARKING: FULL PART NUMBERSOT-89 CASEMAXIMUM RATINGS: (TA=25C) SYM
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: D10B1055