CXT3150 Specs and Replacement

Type Designator: CXT3150

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT89

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CXT3150 datasheet

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CXT3150

CXT3150 www.centralsemi.com SURFACE MOUNT DESCRIPTION NPN SILICON POWER TRANSISTOR The CENTRAL SEMICONDUCTOR CXT3150 type is a NPN Silicon Power Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, high gain, fast switching applications. MARKING FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS (TA=25 C) SYM... See More ⇒

Detailed specifications: CZT751, CPH5901, CPH5902, CPH5905, CS684, CSA1162, CSC2712, CXT3090L, 431, CXT3410, CXT3820, CXT491E, CXT5401E, CXT5551E, CXT5551HC, CXT591E, CXT7090L

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