CXT3410 Specs and Replacement

Type Designator: CXT3410

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT89

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CXT3410 datasheet

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 cxt3410 cxt7410.pdf pdf_icon

CXT3410

CXT3410 NPN CXT7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CXT3410 and SILICON TRANSISTORS CXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operation... See More ⇒

Detailed specifications: CPH5901, CPH5902, CPH5905, CS684, CSA1162, CSC2712, CXT3090L, CXT3150, S9018, CXT3820, CXT491E, CXT5401E, CXT5551E, CXT5551HC, CXT591E, CXT7090L, CXT7410

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