All Transistors. CXT3410 Datasheet

 

CXT3410 Datasheet and Replacement


   Type Designator: CXT3410
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT89
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CXT3410 Datasheet (PDF)

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 cxt3410 cxt7410.pdf pdf_icon

CXT3410

CXT3410 NPNCXT7410 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CXT3410 and SILICON TRANSISTORSCXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operation

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History: MJD3055 | 2SB1188SQ-R | 2SC2613 | 3DF5 | 2N6428 | DTA144WET1G | ST34

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