CXT3410 Datasheet, Equivalent, Cross Reference Search
Type Designator: CXT3410
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT89
CXT3410 Transistor Equivalent Substitute - Cross-Reference Search
CXT3410 Datasheet (PDF)
cxt3410 cxt7410.pdf
CXT3410 NPNCXT7410 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CXT3410 and SILICON TRANSISTORSCXT7410 are Low VCE(SAT) NPN and PNP silicon transistors packaged in the SOT-89 case. High collector current coupled with a low saturation voltage make this an ideal choice for industrial/consumer applications where operation
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .