CXT591E Datasheet. Specs and Replacement

Type Designator: CXT591E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.2 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT89

 CXT591E Substitution

- BJT ⓘ Cross-Reference Search

 

CXT591E datasheet

 ..1. Size:528K  central

 cxt591e.pdf pdf_icon

CXT591E

CXT591E www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collect... See More ⇒

Detailed specifications: CXT3090L, CXT3150, CXT3410, CXT3820, CXT491E, CXT5401E, CXT5551E, CXT5551HC, B647, CXT7090L, CXT7410, CXT7820, RN2609, CTLM3410-M832D, CTLM3474-M832D, CTLM7410-M832D, CTLT3410-M621

Keywords - CXT591E pdf specs

 CXT591E cross reference

 CXT591E equivalent finder

 CXT591E pdf lookup

 CXT591E substitution

 CXT591E replacement