All Transistors. CXT591E Datasheet

 

CXT591E Datasheet, Equivalent, Cross Reference Search


   Type Designator: CXT591E
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT89

 CXT591E Transistor Equivalent Substitute - Cross-Reference Search

   

CXT591E Datasheet (PDF)

 ..1. Size:528K  central
 cxt591e.pdf

CXT591E CXT591E

CXT591Ewww.centralsemi.comSURFACE MOUNT SILICONDESCRIPTION:PNP TRANSISTORThe CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications.MARKING: FULL PART NUMBERSOT-89 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollect

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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