CZT853 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZT853
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 38 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
CZT853 Transistor Equivalent Substitute - Cross-Reference Search
CZT853 Datasheet (PDF)
..1. Size:529K central
czt853.pdf
czt853.pdf
CZT853www.centralsemi.comSURFACE MOUNTHIGH CURRENTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications.MARKING: FULL PART NUMBERPNP Complement: CZT953SOT-223
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
