CZT2680 Datasheet, Equivalent, Cross Reference Search
Type Designator: CZT2680
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: SOT223
CZT2680 Transistor Equivalent Substitute - Cross-Reference Search
CZT2680 Datasheet (PDF)
..1. Size:596K central
czt2680.pdf
czt2680.pdf
CZT2680SURFACE MOUNTwww.centralsemi.comHIGH VOLTAGE DESCRIPTION:NPN SILICONThe CENTRAL SEMICONDUCTOR CZT2680 SWITCHING POWER TRANSISTORNPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general h
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
