CZT2680 Datasheet. Specs and Replacement

Type Designator: CZT2680

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: SOT223

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CZT2680 datasheet

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CZT2680

CZT2680 SURFACE MOUNT www.centralsemi.com HIGH VOLTAGE DESCRIPTION NPN SILICON The CENTRAL SEMICONDUCTOR CZT2680 SWITCHING POWER TRANSISTOR NPN High Voltage Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers and general h... See More ⇒

Detailed specifications: CV7342A-0, CV7343A, CV7343A-O, CV7345A, CXTA62, CYT7090LD, CZD13003, CZT2000, 2SA1837, CZT3090L, CZT3090LE, CV7345A-O, CV7346A-O, CV7362, CV7366, CV7366A, CV7366A-O

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