BUR52S Datasheet. Specs and Replacement
Type Designator: BUR52S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUR52S Substitution
- BJT ⓘ Cross-Reference Search
BUR52S datasheet
BUR52S MECHANICAL DATA Dimensions in mm(inches) HIGH CURRENT NPN SILICON TRANSISTOR 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) FEATURES FAST SWITCHING HIGH PULSE POWER 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) APPLICATIONS POWER SWITCHING CIRCUITS MOTOR CONTROL TO-3 (TO-204... See More ⇒
BUR52 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPN TO-3 transistors in modified Jedec TO-3 metal case, (version " P ") intented for use in switc... See More ⇒
Detailed specifications: BUY48SMD05, BUY48X, BUY80SMD, BUY82CECC, BUY82X, BUY92SMD, BUT11APX, BUR51S, TIP41, BUP50A, BUP53R, BUW90, BUX50SMD, BUX50SMD05, BUX51SMD, BUX51SMD05, BUX52SMD
Keywords - BUR52S pdf specs
BUR52S cross reference
BUR52S equivalent finder
BUR52S pdf lookup
BUR52S substitution
BUR52S replacement
