BUR52S Datasheet, Equivalent, Cross Reference Search
Type Designator: BUR52S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 60 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUR52S Transistor Equivalent Substitute - Cross-Reference Search
BUR52S Datasheet (PDF)
bur52s.pdf
BUR52SMECHANICAL DATADimensions in mm(inches)HIGH CURRENTNPN SILICONTRANSISTOR25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)FEATURES FAST SWITCHING HIGH PULSE POWER1 23(case)3.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50)APPLICATIONS POWER SWITCHING CIRCUITS MOTOR CONTROLTO-3 (TO-204
bur52.pdf
BUR52HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHINGPERFORMANCE EVEN WITHOUTNEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPNTO-3transistors in modified Jedec TO-3 metal case,(version " P ")intented for use in switc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
