All Transistors. BUR52S Datasheet

 

BUR52S Datasheet and Replacement


   Type Designator: BUR52S
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 60 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
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BUR52S Datasheet (PDF)

 ..1. Size:17K  semelab
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BUR52S

BUR52SMECHANICAL DATADimensions in mm(inches)HIGH CURRENTNPN SILICONTRANSISTOR25.15 (0.99)6.35 (0.25)26.67 (1.05)9.15 (0.36)10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)FEATURES FAST SWITCHING HIGH PULSE POWER1 23(case)3.84 (0.151)4.09 (0.161)7.92 (0.312)12.70 (0.50)APPLICATIONS POWER SWITCHING CIRCUITS MOTOR CONTROLTO-3 (TO-204

 9.1. Size:62K  st
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BUR52S

BUR52HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR MAINTAINS GOOD SWITCHINGPERFORMANCE EVEN WITHOUTNEGATIVE BASE DRIVE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The BUR52 is a silicon multiepitaxial planar NPNTO-3transistors in modified Jedec TO-3 metal case,(version " P ")intented for use in switc

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AUY19-3 | KT8255A | BC859W | 2SC4370AP | 2SD471 | JA100 | AC138

Keywords - BUR52S transistor datasheet

 BUR52S cross reference
 BUR52S equivalent finder
 BUR52S lookup
 BUR52S substitution
 BUR52S replacement

 

 
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