2SB0950A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB0950A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 1000
Noise Figure, dB: -
Package: TO220FM
2SB0950A Transistor Equivalent Substitute - Cross-Reference Search
2SB0950A Datasheet (PDF)
2sb0950-a 2sb950-a.pdf
Power Transistors2SB0950 (2SB950), 2SB0950A (2SB950A)Silicon PNP epitaxial planar type darlingtonUnit: mmFor power amplification and switching10.00.2 4.20.2Complementary to 2SD1276 and 2SD1276A5.50.2 2.70.2 Features 3.10.1 High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with on
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .