2SB0950A Specs and Replacement

Type Designator: 2SB0950A

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220FM

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2SB0950A datasheet

 7.1. Size:195K  panasonic

 2sb0950-a 2sb950-a.pdf pdf_icon

2SB0950A

Power Transistors 2SB0950 (2SB950), 2SB0950A (2SB950A) Silicon PNP epitaxial planar type darlington Unit mm For power amplification and switching 10.0 0.2 4.2 0.2 Complementary to 2SD1276 and 2SD1276A 5.5 0.2 2.7 0.2 Features 3.1 0.1 High forward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with on... See More ⇒

Detailed specifications: 2SB1182GP, 2SB1182P, 2SB1182Q, 2SB1182R, 2SB1184P, 2SB1184Q, 2SB1184R, 2SB0950, 2N5551, 2SB1073Q, 2SB1073R, INA1001AC1, INA6001AC1, INA6001AP1, INA6002AC1, INA6005AC1, INA6005AP1

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