INA1001AC1 Datasheet, Equivalent, Cross Reference Search
Type Designator: INA1001AC1
SMD Transistor Code: AFD
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 95
Noise Figure, dB: -
Package: SOT23
INA1001AC1 Transistor Equivalent Substitute - Cross-Reference Search
INA1001AC1 Datasheet (PDF)
..1. Size:107K isahaya
ina1001ac1.pdf
ina1001ac1.pdf
INA1001AC1PRELIMINARY NoticeThis is not a final specification FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA1001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: NPS3565
