All Transistors. INA1001AC1 Datasheet

 

INA1001AC1 Datasheet and Replacement


   Type Designator: INA1001AC1
   SMD Transistor Code: AFD
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Forward Current Transfer Ratio (hFE), MIN: 95
   Noise Figure, dB: -
   Package: SOT23
 

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INA1001AC1 Datasheet (PDF)

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INA1001AC1

INA1001AC1PRELIMINARY NoticeThis is not a final specification FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSome parametric are subject to change. SILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INA1001AC1 is a silicon PNP epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE

Datasheet: 2SB1182R , 2SB1184P , 2SB1184Q , 2SB1184R , 2SB0950 , 2SB0950A , 2SB1073Q , 2SB1073R , TIP41 , INA6001AC1 , INA6001AP1 , INA6002AC1 , INA6005AC1 , INA6005AP1 , INA6006AC1 , INA6006AP1 , INA6006AS1 .

History: 2SC3944A | 2SC1740 | CSD1506P | MMBT404 | 2SD1609 | MMBT4354 | 40306

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