INC1001AC1 Specs and Replacement
Type Designator: INC1001AC1
SMD Transistor Code: CFD
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 95
Package: SOT23
INC1001AC1 Substitution
- BJT ⓘ Cross-Reference Search
INC1001AC1 datasheet
INC1001AC1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING UNIT mm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini package for easy mounting High collector current(IC=500mA) Low coll... See More ⇒
Detailed specifications: INA6005AC1, INA6005AP1, INA6006AC1, INA6006AP1, INA6006AS1, KZT949, KZT951, KZT953, TIP3055, INC2001AC1, INC2001AM1, INC2001AU1, HIT1577, HLB121, HN1B01FDW1T1G, HN2E04F, HN4B101J
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