All Transistors. INC1001AC1 Datasheet

 

INC1001AC1 Datasheet and Replacement


   Type Designator: INC1001AC1
   SMD Transistor Code: CFD
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 95
   Noise Figure, dB: -
   Package: SOT23
 

 INC1001AC1 Substitution

   - BJT ⓘ Cross-Reference Search

   

INC1001AC1 Datasheet (PDF)

 ..1. Size:119K  isahaya
 inc1001ac1.pdf pdf_icon

INC1001AC1

INC1001AC1FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING UNITmm 2.8 INC1001AC1 is a silicon NPN epitaxial type transistor. 0.65 1.5 0.65 It is designed with high collector current and small VCE(sat). FEATURE Super mini package for easy mounting High collector current(IC=500mA) Low coll

Datasheet: INA6005AC1 , INA6005AP1 , INA6006AC1 , INA6006AP1 , INA6006AS1 , KZT949 , KZT951 , KZT953 , 13009 , INC2001AC1 , INC2001AM1 , INC2001AU1 , HIT1577 , HLB121 , HN1B01FDW1T1G , HN2E04F , HN4B101J .

History: DTC124EEFRA

Keywords - INC1001AC1 transistor datasheet

 INC1001AC1 cross reference
 INC1001AC1 equivalent finder
 INC1001AC1 lookup
 INC1001AC1 substitution
 INC1001AC1 replacement

 

 
Back to Top

 


 
.