HN2E04F Specs and Replacement

Type Designator: HN2E04F

SMD Transistor Code: 32G_32L

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SM6

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HN2E04F datasheet

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HN2E04F

HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Unit mm Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage VCEO = 120V High DC Current Gain hFE = 200 to 700 Good hFE Linearity hFE(IC = 0.1mA)/ hFE(IC = 2mA) = 0.95 Q2 Low Forward Voltage Drop VF(3) = 0.98V (typ.) Fast Reverse... See More ⇒

Detailed specifications: KZT953, INC1001AC1, INC2001AC1, INC2001AM1, INC2001AU1, HIT1577, HLB121, HN1B01FDW1T1G, TIP31C, HN4B101J, HN4B102J, HQ1A3M, HQ1A4A, HQ1F2Q, HQ1F3M, HQ1F3P, HQ1L2N

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