All Transistors. HN2E04F Datasheet

 

HN2E04F Datasheet and Replacement


   Type Designator: HN2E04F
   SMD Transistor Code: 32G_32L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SM6
 

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HN2E04F Datasheet (PDF)

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HN2E04F

HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Unit: mmAudio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = 120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity : hFE(IC = 0.1mA)/ hFE(IC = 2mA) = 0.95 Q2 Low Forward Voltage Drop : VF(3) = 0.98V (typ.) Fast Reverse

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: FMBM5551 | KT203AM | KC817-16 | RCP133A | KSC184V | FMMT3904 | KRA722T

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