HN2E04F Datasheet, Equivalent, Cross Reference Search
Type Designator: HN2E04F
SMD Transistor Code: 32G_32L
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SM6
HN2E04F Transistor Equivalent Substitute - Cross-Reference Search
HN2E04F Datasheet (PDF)
..1. Size:327K toshiba
hn2e04f.pdf
hn2e04f.pdf
HN2E04F TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F Super High Speed Switching Application Unit: mmAudio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = 120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity : hFE(IC = 0.1mA)/ hFE(IC = 2mA) = 0.95 Q2 Low Forward Voltage Drop : VF(3) = 0.98V (typ.) Fast Reverse
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
