ISC3581AS1 Specs and Replacement
Type Designator: ISC3581AS1
SMD Transistor Code: 581
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SC72
ISC3581AS1 Substitution
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ISC3581AS1 datasheet
SMALL-SIGNAL TRANSISTOR ISC3581AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISC3581AS1 is a silicon NPN epitaxial type transistor 4.0 designed for high collector current application. Complementary with ISA1399AS1. FEATURE High collector current. ICM=600mA 0.1 High gain band width ... See More ⇒
Detailed specifications: HR1L3N, KZT591, KZT649, KZT749, KZT789A, KZT849, KZT851, KZT853, 2SD313, ISC4356AS1, ISC6046AU1, ISC6053AM1, ISC6053AU1, ISD1447AS1, IT120, IT120A, ISC3242AS1
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