ISC3581AS1 Datasheet and Replacement
Type Designator: ISC3581AS1
SMD Transistor Code: 581
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SC72
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ISC3581AS1 Datasheet (PDF)
isc3581as1.pdf

SMALL-SIGNAL TRANSISTOR ISC3581AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3581AS1 is a silicon NPN epitaxial type transistor 4.0 designed for high collector current application. Complementary with ISA1399AS1. FEATURE High collector current. ICM=600mA 0.1 High gain band width
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC859W | AUY19-3 | KT8255A | AC138 | 2SD471 | 2SC4370AP | JA100
Keywords - ISC3581AS1 transistor datasheet
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History: BC859W | AUY19-3 | KT8255A | AC138 | 2SD471 | 2SC4370AP | JA100



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