All Transistors. ISC3581AS1 Datasheet

 

ISC3581AS1 Datasheet and Replacement


   Type Designator: ISC3581AS1
   SMD Transistor Code: 581
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SC72
 

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ISC3581AS1 Datasheet (PDF)

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ISC3581AS1

SMALL-SIGNAL TRANSISTOR ISC3581AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3581AS1 is a silicon NPN epitaxial type transistor 4.0 designed for high collector current application. Complementary with ISA1399AS1. FEATURE High collector current. ICM=600mA 0.1 High gain band width

Datasheet: HR1L3N , KZT591 , KZT649 , KZT749 , KZT789A , KZT849 , KZT851 , KZT853 , BC558 , ISC4356AS1 , ISC6046AU1 , ISC6053AM1 , ISC6053AU1 , ISD1447AS1 , IT120 , IT120A , ISC3242AS1 .

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