ISC3581AS1 Datasheet, Equivalent, Cross Reference Search
Type Designator: ISC3581AS1
SMD Transistor Code: 581
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SC72
ISC3581AS1 Transistor Equivalent Substitute - Cross-Reference Search
ISC3581AS1 Datasheet (PDF)
..1. Size:140K isahaya
isc3581as1.pdf
isc3581as1.pdf
SMALL-SIGNAL TRANSISTOR ISC3581AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC3581AS1 is a silicon NPN epitaxial type transistor 4.0 designed for high collector current application. Complementary with ISA1399AS1. FEATURE High collector current. ICM=600mA 0.1 High gain band width
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC4355
