All Transistors. ISC4356AS1 Datasheet

 

ISC4356AS1 Datasheet and Replacement


   Type Designator: ISC4356AS1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 18 pF
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: SC72
 

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ISC4356AS1 Datasheet (PDF)

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ISC4356AS1

SMALL-SIGNAL TRANSISTOR ISC4356AS1 FOR HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISC4356AS1 is a silicon NPN epitaxial type transistor 4.0 designed relay drive application. FEATURE 0.1 High voltage. VCEo=60V High collector current. IC=2A 0.45 Low VCE(sat) VCE(sat)=0.5V max (@IC=1A, IB=50mA)

Datasheet: KZT591 , KZT649 , KZT749 , KZT789A , KZT849 , KZT851 , KZT853 , ISC3581AS1 , TIP42 , ISC6046AU1 , ISC6053AM1 , ISC6053AU1 , ISD1447AS1 , IT120 , IT120A , ISC3242AS1 , ISC3244AS1 .

History: TMPT2906A | NPS3900A | 2SC5378 | ST5771-2 | BU724A | D45VH4 | BFP520

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