All Transistors. ISD1447AS1 Datasheet

 

ISD1447AS1 Transistor. Datasheet pdf. Equivalent

Type Designator: ISD1447AS1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 55

Noise Figure, dB: -

Package: SC72

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ISD1447AS1 Datasheet (PDF)

1.1. isd1447as1.pdf Size:235K _isahaya

ISD1447AS1
ISD1447AS1

 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 ●High collector current. ICM= 1.5A ●High

Datasheet: KZT849 , KZT851 , KZT853 , ISC3581AS1 , ISC4356AS1 , ISC6046AU1 , ISC6053AM1 , ISC6053AU1 , S9012 , IT120 , IT120A , ISC3242AS1 , ISC3244AS1 , ISC3247AS1 , ISC3249AS1 , KZT3906 , KZT4401 .

 


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