All Transistors. ISD1447AS1 Datasheet

 

ISD1447AS1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: ISD1447AS1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: SC72

 ISD1447AS1 Transistor Equivalent Substitute - Cross-Reference Search

   

ISD1447AS1 Datasheet (PDF)

 ..1. Size:235K  isahaya
 isd1447as1.pdf

ISD1447AS1 ISD1447AS1

SMALL-SIGNAL TRANSISTOR ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 High collector current. ICM= 1.5A High

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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