ISD1447AS1 Specs and Replacement
Type Designator: ISD1447AS1
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Package: SC72
ISD1447AS1 Substitution
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ISD1447AS1 datasheet
SMALL-SIGNAL TRANSISTOR ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 High collector current. ICM= 1.5A High ... See More ⇒
Detailed specifications: KZT849, KZT851, KZT853, ISC3581AS1, ISC4356AS1, ISC6046AU1, ISC6053AM1, ISC6053AU1, 9014, IT120, IT120A, ISC3242AS1, ISC3244AS1, ISC3247AS1, ISC3249AS1, KZT3906, KZT4401
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