All Transistors. ISD1447AS1 Datasheet

 

ISD1447AS1 Datasheet and Replacement


   Type Designator: ISD1447AS1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: SC72
 

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ISD1447AS1 Datasheet (PDF)

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ISD1447AS1

SMALL-SIGNAL TRANSISTOR ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 High collector current. ICM= 1.5A High

Datasheet: KZT849 , KZT851 , KZT853 , ISC3581AS1 , ISC4356AS1 , ISC6046AU1 , ISC6053AM1 , ISC6053AU1 , C3198 , IT120 , IT120A , ISC3242AS1 , ISC3244AS1 , ISC3247AS1 , ISC3249AS1 , KZT3906 , KZT4401 .

History: BF194 | 2SA496 | 2SC831 | 2N1532A | BD543A | 2N5552-1 | 2SD962

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