ISA1399AS1 Datasheet. Specs and Replacement
Type Designator: ISA1399AS1 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SC72
ISA1399AS1 Substitution
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ISA1399AS1 datasheet
SMALL-SIGNAL TRANSISTOR ISA1399AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISA1399AS1 is a silicon PNP epitaxial type transistor 4.0 designed with High collector current, high voltage. Complementary with ISA3581AS1. FEATURE 0.1 High collector current. ICM=600mA High gain band wi... See More ⇒
Detailed specifications: IMB10AFRA, IMB11AFRA, IR413, ISA1235AC1, ISA1283AS1, ISA1284AS1, ISA1286AS1, ISA1287AS1, BC547B, ISA1530AC1, ISA1602AM1, ISA1603AM1, ISA1989AU1, ISA1993AS1, ISA1995AS1, ISA2166AM1, ISA2166AU1
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