All Transistors. ISA1399AS1 Datasheet

 

ISA1399AS1 Datasheet and Replacement


   Type Designator: ISA1399AS1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: SC72
 

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ISA1399AS1 Datasheet (PDF)

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ISA1399AS1

SMALL-SIGNAL TRANSISTOR ISA1399AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1399AS1 is a silicon PNP epitaxial type transistor 4.0 designed with High collector current, high voltage. Complementary with ISA3581AS1. FEATURE 0.1 High collector current. ICM=600mA High gain band wi

Datasheet: IMB10AFRA , IMB11AFRA , IR413 , ISA1235AC1 , ISA1283AS1 , ISA1284AS1 , ISA1286AS1 , ISA1287AS1 , D667 , ISA1530AC1 , ISA1602AM1 , ISA1603AM1 , ISA1989AU1 , ISA1993AS1 , ISA1995AS1 , ISA2166AM1 , ISA2166AU1 .

History: MP1612A | NSV1C201MZ4 | F103 | BU2520AW | PBSS306NX | MP3693 | MRF525

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