ISA1399AS1 Datasheet, Equivalent, Cross Reference Search
Type Designator: ISA1399AS1
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 55 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: SC72
ISA1399AS1 Transistor Equivalent Substitute - Cross-Reference Search
ISA1399AS1 Datasheet (PDF)
..1. Size:145K isahaya
isa1399as1.pdf
isa1399as1.pdf
SMALL-SIGNAL TRANSISTOR ISA1399AS1 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISA1399AS1 is a silicon PNP epitaxial type transistor 4.0 designed with High collector current, high voltage. Complementary with ISA3581AS1. FEATURE 0.1 High collector current. ICM=600mA High gain band wi
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
