All Transistors. ISB1035AS1 Datasheet

 

ISB1035AS1 Datasheet and Replacement


   Type Designator: ISB1035AS1
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.6 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 55
   Noise Figure, dB: -
   Package: SC72
 

 ISB1035AS1 Substitution

   - BJT ⓘ Cross-Reference Search

   

ISB1035AS1 Datasheet (PDF)

 ..1. Size:211K  isahaya
 isb1035as1.pdf pdf_icon

ISB1035AS1

SMALL-SIGNAL TRANSISTOR ISB1035AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEDESCRIPTION OUTLINE DRAWING Unit ISB1035AS1 is a resin sealed silicon PNP epitaxial type 4.0 transistor. It is designed for low frequency power amplify application. Complementary with ISD1447AS1. FEATURE 0.1 High collector current. ICM= 1.5A Hi

Datasheet: ISA1603AM1 , ISA1989AU1 , ISA1993AS1 , ISA1995AS1 , ISA2166AM1 , ISA2166AU1 , ISA2188AM1 , ISA2188AU1 , MPSA42 , IMB2AFRA , IMB3AFRA , IMD10AMT1G , IMD2AFRA , IMD3AFRA , IMD6AFRA , IMD9AFRA , IMH11AFRA .

History: 2SC4493 | GES2905A

Keywords - ISB1035AS1 transistor datasheet

 ISB1035AS1 cross reference
 ISB1035AS1 equivalent finder
 ISB1035AS1 lookup
 ISB1035AS1 substitution
 ISB1035AS1 replacement

 

 
Back to Top

 


 
.