ISB1035AS1 Datasheet. Specs and Replacement
Type Designator: ISB1035AS1 📄📄
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 55
Package: SC72
ISB1035AS1 Substitution
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ISB1035AS1 datasheet
SMALL-SIGNAL TRANSISTOR ISB1035AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit ISB1035AS1 is a resin sealed silicon PNP epitaxial type 4.0 transistor. It is designed for low frequency power amplify application. Complementary with ISD1447AS1. FEATURE 0.1 High collector current. ICM= 1.5A Hi... See More ⇒
Detailed specifications: ISA1603AM1, ISA1989AU1, ISA1993AS1, ISA1995AS1, ISA2166AM1, ISA2166AU1, ISA2188AM1, ISA2188AU1, TIP120, IMB2AFRA, IMB3AFRA, IMD10AMT1G, IMD2AFRA, IMD3AFRA, IMD6AFRA, IMD9AFRA, IMH11AFRA
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