IMH2AFRA Datasheet. Specs and Replacement
Type Designator: IMH2AFRA 📄📄
SMD Transistor Code: H2
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SC74
IMH2AFRA Substitution
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IMH2AFRA datasheet
EMH2 / UMH2N / IMH2A EMH2FHA / UMH2NFHA / IMH2AFRA Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline EMT6 UMT6 Parameter Tr1 and Tr2 (6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) 100mA (2) (2) (3) (3) R1 47kW EMH2 UMH2N EMH2FHA UMH2NFHA R2 (SC-107C) 47kW SOT-353 (SC-88) SMT6 ... See More ⇒
umh2n imh2a h2 sot23-6sot363.pdf 
Transistors General purpose (dual digital transistors) UMH2N / IMH2A FFeatures FExternal dimensions (Units mm) 1) Two DTC144Es chips in a UMT or SMT package. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma- chines. 3) Transistor elements are indepen- dent, eliminating interference. 4) Mounting cost and area can be cut in half. FStructure Epitaxial planar type NPN s... See More ⇒
Detailed specifications: IMH11AFRA, IMH14AFRA, IMH15A, IMH15AFRA, IMH1AFRA, IMH20TR1G, IMH21, IMH23, 2N5401, IMH3AFRA, IMH4AFRA, IMH5AFRA, INC6001AC1, INC6002AC1, INC6005AC1, INC6005AP1, INC6006AC1
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