All Transistors. IMH8AFRA Datasheet

 

IMH8AFRA Datasheet and Replacement


   Type Designator: IMH8AFRA
   SMD Transistor Code: H8
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC74
 

 IMH8AFRA Substitution

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IMH8AFRA Datasheet (PDF)

 ..1. Size:1148K  rohm
 umh8nfha imh8afra.pdf pdf_icon

IMH8AFRA

UMH8NFHA / IMH8AFRAUMH8N / IMH8ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineUMT6 SMT6Parameter Tr1 and Tr2(4)(6) (5) (5) (6) (4)VCEO50V(3)(1)IC100mA (2) (2) (1) (3)R110kWUMH8NFHA IMH8AFRAUMH8N IMH8ASOT-353 (SC-88) SOT-457 (SC-74)lFeatures lInner circuit1) Built-In Bia

 9.1. Size:39K  rohm
 umh8n umh8n imh8a.pdf pdf_icon

IMH8AFRA

UMH8N / IMH8ATransistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit : mm) Features1) Two DTC114T chips in a EMT or UMT or SMTpackage. UMH8N1.25 Equivalent circuits2.1UMH8NIMH8A(3) (2) (1)(4) (5) (6)0.1Min.R1R1ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88R1R1(4) (5) (6)(3) (2) (1)R1=10k R1=10k

 9.2. Size:48K  rohm
 umh8n imh8a h8 sot363 sot23-6.pdf pdf_icon

IMH8AFRA

(96-448-A114T)

Datasheet: INC6005AP1 , INC6006AC1 , INC6006AP1 , INC6006AS1 , INC6007AP1 , INC6008AC1 , INC6008AP1 , IMH6AFRA , TIP42C , IMH9AFRA , IMT18 , IMT1AFRA , IMT2AFRA , IMT3AFRA , IMT4FRA , IMX25 , IMX2FRA .

History: 2SA505O | 3CA1370 | DTC123YKAFRA | 2SC979 | CTP1033 | TD13005 | MP506

Keywords - IMH8AFRA transistor datasheet

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