IMH8AFRA Datasheet, Equivalent, Cross Reference Search
Type Designator: IMH8AFRA
SMD Transistor Code: H8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SC74
IMH8AFRA Transistor Equivalent Substitute - Cross-Reference Search
IMH8AFRA Datasheet (PDF)
umh8nfha imh8afra.pdf
UMH8NFHA / IMH8AFRAUMH8N / IMH8ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineUMT6 SMT6Parameter Tr1 and Tr2(4)(6) (5) (5) (6) (4)VCEO50V(3)(1)IC100mA (2) (2) (1) (3)R110kWUMH8NFHA IMH8AFRAUMH8N IMH8ASOT-353 (SC-88) SOT-457 (SC-74)lFeatures lInner circuit1) Built-In Bia
umh8n umh8n imh8a.pdf
UMH8N / IMH8ATransistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit : mm) Features1) Two DTC114T chips in a EMT or UMT or SMTpackage. UMH8N1.25 Equivalent circuits2.1UMH8NIMH8A(3) (2) (1)(4) (5) (6)0.1Min.R1R1ROHM : UMT6 Each lead has same dimensionsEIAJ : SC-88R1R1(4) (5) (6)(3) (2) (1)R1=10k R1=10k
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SD1497
