IMH8AFRA Datasheet. Specs and Replacement
Type Designator: IMH8AFRA 📄📄
SMD Transistor Code: H8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SC74
IMH8AFRA Substitution
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IMH8AFRA datasheet
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UMH8N / IMH8A Transistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT package. UMH8N 1.25 Equivalent circuits 2.1 UMH8N IMH8A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R1 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R1 R1 (4) (5) (6) (3) (2) (1) R1=10k R1=10k... See More ⇒
Detailed specifications: INC6005AP1, INC6006AC1, INC6006AP1, INC6006AS1, INC6007AP1, INC6008AC1, INC6008AP1, IMH6AFRA, TIP42C, IMH9AFRA, IMT18, IMT1AFRA, IMT2AFRA, IMT3AFRA, IMT4FRA, IMX25, IMX2FRA
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