IMH8AFRA Datasheet. Specs and Replacement

Type Designator: IMH8AFRA  📄📄 

SMD Transistor Code: H8

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SC74

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IMH8AFRA datasheet

 ..1. Size:1148K  rohm

 umh8nfha imh8afra.pdf pdf_icon

IMH8AFRA

UMH8NFHA / IMH8AFRA UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) VCEO 50V (3) (1) IC 100mA (2) (2) (1) (3) R1 10kW UMH8NFHA IMH8AFRA UMH8N IMH8A SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInner circuit 1) Built-In Bia... See More ⇒

 9.1. Size:39K  rohm

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IMH8AFRA

UMH8N / IMH8A Transistors General purpose (dual digital transistors) UMH8N / IMH8A External dimensions (Unit mm) Features 1) Two DTC114T chips in a EMT or UMT or SMT package. UMH8N 1.25 Equivalent circuits 2.1 UMH8N IMH8A (3) (2) (1) (4) (5) (6) 0.1Min. R1 R1 ROHM UMT6 Each lead has same dimensions EIAJ SC-88 R1 R1 (4) (5) (6) (3) (2) (1) R1=10k R1=10k... See More ⇒

 9.2. Size:48K  rohm

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IMH8AFRA

(96-448-A114T) ... See More ⇒

Detailed specifications: INC6005AP1, INC6006AC1, INC6006AP1, INC6006AS1, INC6007AP1, INC6008AC1, INC6008AP1, IMH6AFRA, TIP42C, IMH9AFRA, IMT18, IMT1AFRA, IMT2AFRA, IMT3AFRA, IMT4FRA, IMX25, IMX2FRA

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