TCSA562O Specs and Replacement
Type Designator: TCSA562O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.63 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO92
TCSA562O Substitution
- BJT ⓘ Cross-Reference Search
TCSA562O datasheet
TCSA562* TO-92 PLASTIC PACKAGE PNP SILICON EPITAXIAL TRANSISTOR ROHS Audio Frequency Low Power Amplifier Applications. B B C C E E ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA IB Base Current 100 mA ... See More ⇒
Detailed specifications: KTA1297, KTA143ZKA, TA114ECA, TA124ECA, TA143ECA, TA144ECA, TB100, TCC598, A42, TCSA562Y, KTA1267-GR, KTA1267-O, KTA1267-Y, KTA1270-O, KTA1270-Y, KTA1504-GR, KTA1504LT1
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