TCSA562O Datasheet, Equivalent, Cross Reference Search
Type Designator: TCSA562O
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.63 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 13 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO92
TCSA562O Transistor Equivalent Substitute - Cross-Reference Search
TCSA562O Datasheet (PDF)
tcsa562.pdf
TCSA562*TO-92 PLASTIC PACKAGEPNP SILICON EPITAXIAL TRANSISTOR ROHSAudio Frequency Low Power Amplifier Applications.BBCCEEABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCBOCollector-Base Voltage 35 VVCEOCollector-Emitter Voltage 30 VVEBOEmitter-Base Voltage 5 VICCollector Current 500 mAIBBase Current 100 mA
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .